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SOI / EPI Services

Overall Wafer**
  Material: Silicon-On-Insulator wafers Material: Silicon-On-Insulator wafers
Diameter: 100 ± 0.5mm 100 ± 0.5mm
Primary Flat: <110> ± 0.5° <110> ± 0.5°
Length: 32.5 ± 2.5mm 32.5 ± 2.5mm
Secondary Flat: SEMI Std SEMI Std
Total Thickness Variation: < 3µm
< 3µm
Bow: < 80µm < 80µm
Warp: < 80µm < 80µm
Handle Wafer**
Type/Dopant: P/Boron/CZ N/Phos/CZ
Orientation: (100) ± 1° (100) ± 1°
Resistivity: 1-10 ohm-cm 1-30 ohm-cm
Thickness: 450 ± 5µm 500 ± 5µm
Backside Finish: Polished with no Oxide or
Laser Mark
Polished with no Oxide or
Laser Mark
BOX**
Growth Type: Thermal Thermal
Thickness: 10,000 ± 500Å 10,000 ± 500Å
Grown on: Handle Wafer Handle Wafer
Device Layer**
Type/Dopant: P/Boron/CZ N/Phos/CZ
Orientation: (100) ± 1° (100) ± 1°
Resistivity: 1-10 ohm-cm 1-30 ohm-cm
Thickness: 2 - 10µm ± 0.5µm
> 10 - 400µm ± 1µm
2 - 10µm ± 0.5µm
> 10 - 400µm ± 1µm
Distance to device edge from silicon wafer edge: < 5mm < 5mm
Voids: None None

**Please contact IWS for pricing
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